(5/5) based on 13 customer reviews
Description
Jun 4, 2001 2N4856 . 4 to 10. 40. 25. 250. 9. 2N4857. 2 to 6. 40. 40. 250. 10. 2N4858. 0.8 to 4. 40. 60. 250. 20. 2N4859. 4 to 10. 30. 25. 250. The CENTRAL SEMICONDUCTOR 2N4856 and. 2N4856A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: CP206- 2N4856 . N-Channel JFET Die. Die Size. 21 x 18 MILS. Die Thickness. 8.0 MILS. Drain Bonding Pad Size. 3.0 x 3.0 MILS. Source Bonding Pad Size. TO-18 2N4856 . 25. 4.0. 10. 50. - -. 40. 18. 8.0. 9.0. 25. SDG. TO-18 2N4856A. 25. 4.0. 10. 50. - -. 40. 10. 4.0. 8.0. 20. SDG. TO-18 2N4857. 40. 2.0. 6.0. 20. 100. Junction and Storage Temperature. TJ, Tstg. 55 to +150. C. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
| Part Number | 2N4856 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Texas Instruments |
| Description | N CHANNEL JFET |
| Series | Military, MIL-PRF-19500/385 |
| Packaging | Bulk |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 175mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 10V @ 500pA |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Resistance - RDS(On) | 25 Ohm |
| Power - Max | 360mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Image |  |
2N4856
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