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Description
The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM ALPHA & OMEGA. SEMICONDUCTOR. Document No. ID-00008. Version. F. Title. AO3409 Marking Description. SOT-23 PACKAGE MARKING DESCRIPTION . This AOS product reliability report summarizes the qualification result for AO3409 . Accelerated environmental tests are performed on a specific sample size, and NXP small-signal N- and. P-channel MOSFETs. Our advanced MOSFET solutions deliver the flexibility and performance that todays market demands. Choose
| Part Number | AO3409 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 30V 2.6A SOT23 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 2.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3L |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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