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Description
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for This AOS product reliability report summarizes the qualification result for AO4413 . Accelerated environmental tests are performed on a specific sample size, and SEMICONDUCTOR AO4413 Marking Description. SO-8 PACKAGE MARKING DESCRIPTION. Green product. NOTE: LOGO - AOS Logo. 4413 - Part number This Low-profile High-power MOSFET is produced using ON. Semiconductors trench technology, which is specifically designed to minimize gate charge and AO4413 . 1. 2. 3. 4. 5. 6. 7. 8. Q13. BSS138. 1. 2. 3. R396. 10K. C484. 220uF. C477. 0.1uF. Q9. BSS138. 1. 2. 3. J13. PWR_JACK. 2. 3. 1. C478. 0.01uF. Q11.
| Part Number | AO4413 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 30V 15A 8SOIC |
| Series | - |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 15A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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