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Description
Datasheet The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load AOS Semiconductor. Product Reliability Report. AON2406 , rev A. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc www.aosmd.com ALPHA & OMEGA. SEMICONDUCTOR. Document No. PD-01740. Version A. Title AON2406 Marking Description. DFN2X2 PACKAGE MARKING Apr 3, 2012 AON2410, AON2409, AON2408, AON2407, and AON2406 are the best-in-class 20V and 30V devices on the market today in a DFN2x2 AON2406 . PMPB12UN**. 2 x 2. N single. 20. 8. -. 11.3. 0.4. 1. 14. 18. 17. 23. 21. 33. 8.8. 886. 233. 129. 29. 52. AON2407. PMPB47XP**. 2 x 2. P single. 30. 12.
| Part Number | AON2406 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 20V 8A 6LDFN |
| Series | - |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 8A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DFN-EP (2x2) |
| Package / Case | 6-UDFN Exposed Pad |
| Image |  |
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