Description
The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load This AOS product reliability report summarizes the qualification result for AON6411 . Accelerated environmental tests are performed on a specific sample size,
Part Number | AON6411 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 47A 8DFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 47A (Ta), 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10290pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 7.3W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-DFN (5x6) |
Package / Case | 8-PowerSMD, Flat Leads |
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