(5/5) based on 18 customer reviews
Description
The AON7280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction AOS Semiconductor. Product Reliability Report. AON7280 , rev A. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc www.aosmd.com Dec 21, 2012 Built using AOS proprietary AlphaMOS technology, the 80V AON7280 and 100V AON7290 offer ultra-low R. DS(ON) that are 27% and 10% Dec 21, 2012 Built using AOS proprietary AlphaMOS technology, the 80V AON7280 and 100V AON7290 offer ultra-low RDS(ON) that are. 27% and 10% AON7280 Marking Description. DFN3.3X3.3 PACKAGE MARKING DESCRIPTION. 69. O. NOTE: LOGO - AOS Logo. 7280 - Part number code. F - Fab code.
| Part Number | AON7280 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 80V 20A 8DFN |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1871pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 6.3W (Ta), 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
| Image |  |
AON7280
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5000000
1.78
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