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Description
DATASHEET The AOT470 /AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, ALPHA & OMEGA. SEMICONDUCTOR. Document No. PD-O 1089. Version A. Title AOT470 Marking Description. T0220 PACKAGE MARKING DESCRIPTION. This AOS product reliability report summarizes the qualification result for AOT470 . Accelerated environmental tests are performed on a specific sample size, and desired perfor negatively im ail if they are simulate a poo. L2). AOT470 age 3 of 8 te driving htly lower e current. 1 causes hat Q1 is mportant. MOSFETs rmance.
| Part Number | AOT470 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 75V 10A TO220 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 136nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640pF @ 30V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 268W (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Image |  |
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