Description
BDV65B (NPN),. BDV64B (PNP). Complementary Silicon. Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier BDV65B : 10 A, 100 V NPN Darlington Bipolar Power Transistor. For complete documentation, see the data sheet. The 10 A, 100 V NPN Bipolar Power Transistor Feb 1, 2006 BDV65B . BDV65B -S. BDV65C. BDV65C-S. BDV65-S. BDV66. BDV66-S. BDW83B. BDW83B-S. BDW83C. BDW83C-S. BDW83D. BDW83D-S. BDV65B . BDV64B. 12. 125. 100. 100. 1,000. - -. 5.0. 4.0. 2.0. 5.0. 60**. BDW83A BDW84A. 15. 130. 60. 60. 750. 20,000. 6.0. 3.0. 2.5. 6.0. - -. BDW83B. BDW84B Jun 1, 1993 BDV65, BDV65A, BDV65B and BDV65C. 125 W at 25 C Case Temperature. 12 A Continuous Collector Current. Minimum hFE of 1000 at 4
Part Number | BDV65B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Texas Instruments |
Description | POWER TRANSISTOR NPN TO218 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
Power - Max | 125W |
Frequency - Transition | 60MHz |
Operating Temperature | - |
Mounting Type | Through Hole |
Package / Case | TO-218-3 |
Supplier Device Package | TO-218 |
Image |
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