Part Number | BSB012NE2LX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 25V 170A WDSON-2 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4900pF @ 12V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 30A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MG-WDSON-2, CanPAK M |
Package / Case | 3-WDSON |
Image |
BSB012NE2LX
TI/ST
21664
1.21
Useta Tech (HK) Limited
BSB012NE2LX
TexasIns
14400
2.3425
HK HEQING ELECTRONICS LIMITED
BSB012NE2LX
TI/CC
1000
3.475
AIC Semiconductor Co., Limited
BSB012NE2LX
TI?
1000
4.6075
STH Electronics Co.,Ltd
BSB012NE2LX
TI-BB
39651
5.74
N&S Electronic Co., Limited