(4/5) based on 12 customer reviews
Description
Apr 26, 2013 BSC009NE2LS . OptiMOSTM. Power-MOSFET. Features. Optimized for e-fuse and ORing application. Very low on-resistance R DS(on) @ V Material Content Data Sheet. Sales Product Name. BSC009NE2LS . Issued. 29. August 2013. MA#. MA001010850. Package. PG-TDSON-8-7. Weight*. Figure 8 Schematic part 4. Power inductance: WE 7443556082 (820nH). Buck- MOSFETs: BSC010N04LS. Boost MOSFETs: BSC009NE2LS . D1: CENTRAL CMDSH-3TR. L: PULSE PA 0515.321NLT 0.32 H. M1: INFINEON BSC032NE2LS. M2: INFINEON BSC009NE2LS . 1.0 F. 1.0 F. 0.22 F. 0.32 H. BSC009NE2LS . SP000893362. BSC009NE2LSATMA1. SuperSO8. 25. 0.9. 1.2 2.0. 100. BSC010NE2LS. SP000776124. BSC010NE2LSATMA1. SuperSO8.
| Part Number | BSC009NE2LS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 25V 41A TDSON-8 |
| Series | OptiMOS |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 126nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image |  |
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