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Description
DATASHEET Feb 12, 2013 BSC010NE2LS . OptiMOSTM. Power-MOSFET. Features. Optimized for high performance Buck converter. Very low on-resistance R DS(on) Tpackage_MAX = 90 C. CanPAK . BSB009N03LS. VOUT = 12V. IOUT = 20A continuous. Tpackage_MAX = 70 C. SuperSO8. BSC010NE2LS . VOUT = 12V. GL = 2 x BSC010NE2LS . VOUT = 3.3V. VOUT = 1.0V. VOUT = 1.5V. VOUT = 1.2 V. VOUT = 1.8V. VOUT = 2.5V. fSW = 400kHz. July 13, 2012. FN7832.1 of a Power-MOSFET (OptiMOS 25V, BSC010NE2LS [1]). The blue s . an Infineon power MOSFET ( BSC010NE2LS ) is shown. The five line (blue line), the Oct 20, 2014 MOSFETs (Manufacturer PN: BSC010NE2LS ) are connected in parallel across VOUT and PGND next to the remote voltage sensing location
| Part Number | BSC010NE2LS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 25V 39A TDSON-8 |
| Series | OptiMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image |  |
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