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Description
DATASHEET Mar 8, 2016 BSG0811ND . Power Block. Features. Dual asymmetric N-channel OptiMOS 5 MOSFET. Logic level (4.5V rated). Optimized for high BSG0811ND . Issued. 13. April 2015. MA#. MA001288508. Package. PG-TISON- 8-4. Weight*. 112.74 mg. Construction Element. Material Group. Substances. OptiMOS 5 25 V Power Block BSG0811ND reaches a maximum temperature of only 61.7 C. Conditions: 5 phases; Vin = 12 V; Vout = 1.8 V;. L = 150 nH; fsw Mar 20, 2014 J6. CIN9. 22uF. 1206. COUT7. 100uF. 6.3V. 1206. R4 0. E1. R11. 3.57k. 1%. R14 . 20k. + COUT6. 470uF. 2.5V. 7343. Q1. BSG0811ND . 4. 5. 3. Feb 17, 2016 OPT. 1. 2. J6. CIN9 22uF 1206. COUT7 100uF 6.3V 1206. R4. 0. E1. R11. 3.57k 1 %. R14 20k. +COUT6. 470uF 2.5V 7343. Q1. BSG0811ND . 4.
| Part Number | BSG0811ND |
| Brand | Texas Instruments |
| Image |  |
BSG0811ND
TI/ST
20
0.58
Yingxinyuan INT'L (Group) Limited
BSG0811ND
TexasIns
28
1.8975
HongKong JDG Electronic Co., Limited
BSG0811ND
TI/CC
21100
3.215
N&S Electronic Co., Limited
BSG0811ND
TI?
17000
4.5325
CIS Ltd (CHECK IC SOLUTION LIMITED)
BSG0811ND
TI-BB
10000
5.85
Xiefeng (HK) INT'L Electronics Limited
