(5/5) based on 19 customer reviews
Description
Nov 29, 2012 BSP135 . SIPMOS. . Small-Signal-Transistor. Features. N-channel. Depletion mode. dv /dt rated. Available with V GS(th) indicator on reel. BSP135 . SOT-223. 600. 45. -1. -2.1. 20. BSS159N. SOT-23. 60. 3.5. -2.4. -3.5. 130. BSS169. SOT-23. 100. 6. -1.8. -2.9. 90. BSS139. SOT-23. 250. 14. -1. -2.1. 30. Sep 22, 2015 BSP135 depletion MOSFET. SOT223. INFINEON. BSP135 . R1. 10k film resistor. R0805. R10. 4R99 film resistor. R0805. R11. 2K film resistor. Oct 13, 2016 MOSFET. OptiMOSTM 5 Power-Transistor, 100 V. Features. Ideal for high frequency switching and sync. rec. Excellent gate charge x Material Content Data Sheet. Sales Product Name. BSP135 H6906. Issued. 29. August 2013. MA#. MA001091872. Package. PG-SOT223-4-21. Weight*.
| Part Number | BSP135 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 600V 120MA SOT-223 |
| Series | SIPMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 25V |
| Vgs (Max) | - |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 45 Ohm @ 120mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
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