Texas Instruments

Description

e s ig n w ith th is in fo. GND. +3V3. G5V13DC. G5V13DC. BSS138PS . BSS138PS . GND. GND. 1. 0. 0 k. 10R. 1. 0. 0 k. 10R. GND. GND. +3V3. +3V3. + 3V3. GND. These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products. Jan 20, 2016 VCCB. 8. B1. 7. B2. 6. OE. 5. C41. 0.1UF. Q1-1. BSS138PS . TL2. R6. 0. DNP. R10. 220. R134. 0DNP. D1. MSS1P3L. A. C. J3. CON_2x8_0.1. BSS138PS . MOSFET - BSS138PS , N-CH, 60V,. 0.32A, 1.6 OHM, SC-88. NXP. BSS138PS ,115. 39. 3. R3,R12,R96. 0. RES MF ZERO OHM 1/16W 5% 0402 Automotive. SOT23. 3000/Tape & Reel. Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2.