Part Number | BSZ0902NSI |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 21A TSDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8-FL |
Package / Case | 8-PowerTDFN |
Image |
BSZ0902NSI
TI/ST
2760
0.46
Shenzhen Qiangneng Electronics Co., Ltd.
BSZ0902NSI
TexasIns
4216
1.9075
Rs (Int'l) Electronics Limited
BSZ0902NSI
TI/CC
5352
3.355
Shenzhen Senli Technology Co., Ltd
BSZ0902NSI
TI?
7091
4.8025
Superior Electronics Limited
BSZ0902NSI
TI-BB
662
6.25
Shenzhen Hongying Micro Technology Co., Ltd