Rated 
(5/5) based on 2 customer reviews
(5/5) based on 2 customer reviews
| Part Number | C2M0080120D |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 1200V 31.6A TO247 |
| Series | C2M |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 1000V |
| Vgs (Max) | +25V, -10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
Lowest Price: $1.5
Highest Price: $4.64
1 - 5 of 5 Record(s)
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C2M0080120D Ref.
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