Description
MOSFET N-CH 1700V 4.9A TO247 Series: Z-FET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Through Hole Capacitance: TO-247-3
Part Number | C2M1000170D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 1700V 4.9A TO247 |
Series | Z-FET |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs(th) (Max) @ Id | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 191pF @ 1000V |
Vgs (Max) | +25V, -10V |
FET Feature | - |
Power Dissipation (Max) | 69W (Tc) |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 2A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
C2M1000170D
TI/ST
1000
0.1
Jinmingsheng Technology (HK) Co.,Limited
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TexasIns
180
0.705
SUNTOP SEMICONDUCTOR CO., LIMITED
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17245
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10000
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Xiefeng (HK) INT'L Electronics Limited
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