Description
Page 1. Application Report. SLOA105A October 2003 Revised September 2005. 1. Calculating Gain for Audio Amplifiers. Audio Power Amplifiers. Page 1. CoolMOS benefits in both hard and soft switching SMPS topologies www.infineon.com/coolmos. Page 2. Single. Hard switching topologies. Nov 9, 2012 Page 1. November 2012. Doc ID 023815 Rev 1. 1/20. AN4191. Application note. Power MOSFET: R g impact on applications. By Giuseppe
Part Number | C3M0065090D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 900V 36A TO247-3 |
Series | C3M |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Vgs(th) (Max) @ Id | 2.1V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 30.4nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 600V |
Vgs (Max) | +18V, -8V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 20A, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
C3M0065090D
TI/ST
260
0.57
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
C3M0065090D
TexasIns
1800
1.7525
Zhaoxin Electronic Limited
C3M0065090D
TI/CC
2200
2.935
HK FEILIDI ELECTRONIC CO., LIMITED
C3M0065090D
TI?
3113
4.1175
N&S Electronic Co., Limited
C3M0065090D
TI-BB
10000
5.3
Xiefeng (HK) INT'L Electronics Limited