Part Number | C3M0120090D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | 900V, 120 MOHM, G3 SIC MOSFET |
Series | C3M |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Vgs(th) (Max) @ Id | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 17.3nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 600V |
Vgs (Max) | +18V, -8V |
FET Feature | - |
Power Dissipation (Max) | 97W (Tc) |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 15A, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
C3M0120090D
TI/ST
1200
0.91
S.E. Components
C3M0120090D
TexasIns
775
2.2025
WIN AND WIN ELECTRONICS LIMITED
C3M0120090D
TI/CC
15000
3.495
Redstar Electronic Limited
C3M0120090D
TI?
75000
4.7875
Yuhua Technology Co.,Limited
C3M0120090D
TI-BB
11003
6.08
CIS Ltd (CHECK IC SOLUTION LIMITED)