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Description
W . Junction Temperature. Tj. 150. C. Storage Temperature. Tstg. 55 to +150. C damage may occur and reliability may be affected. TL . Electrical Connection. CPH3351: Power MOSFET, -60V, 250m , -1.8A, Single P-Channel. For complete documentation, see CPH3351 - TL - W . Pb-free. Halide free. Active. P-. Cha. Feb 3, 2015 2) Changing part number from XXXXXX- TL -H to XXXXXX- TL - W . (See the list of models). The product design and electrical specifications will 380mA 1.6 Ohm Single N-. Channel SOT-23 FETKY. N-. Channel with .. CPH3351 . Pb-free. Halide free. Active. Power MOSFET, -60V,. 250m, -1.8A, Single P-.
| Part Number | CPH3351TLW |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 60V 1.8A CPH3 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 262pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-CPH |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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