Description
Datasheet Aug 24, 2015 CSD13201W10 . DSBGA. YZB. 4. 3000. 180.0. 8.4. 1.06. 1.06. 0.69. 4.0. 8.0. Q1. PACKAGE MATERIALS INFORMATION www.ti.com. 24-Aug- Aug 23, 2015 Device Marking. (4/5). Samples. CSD13201W10 . ACTIVE. DSBGA. YZB. 4. 3000. Green (RoHS. & no Sb/Br). SNAGCU. Level-1-260C-UNLIM. PMODE. 0.082 F. C3. 0.068 F. C2. DNP. RECT. 150k. R17. CM_ILIM. 130k. R18 . 5.62Meg. R13. 500 Ohm. R14. GND. 976k. R1. PMODE. Q2. CSD13201W10 .
Part Number | CSD13201W10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 12V 1.6A 4DSBGA |
Series | NexFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 462pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DSBGA (1x1) |
Package / Case | 4-UFBGA, DSBGA |
Image |
CSD13201W10
TI/ST
10000
1.67
Shenzhen Taochip Electronic Co.,Ltd
CSD13201W10
TexasIns
29863
2.51
LIXINC Electronics Co., Limited
CSD13201W10
TI/CC
500
3.35
KYO Inc.
CSD13201W10
TI?
6000
4.19
Riking Technology (HK) Co., Limited
CSD13201W10
TI-BB
62000
5.03
N&S Electronic Co., Limited