Part Number | CSD13303W1015 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 12V 31A 6DSBGA |
Series | NexFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 715pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1.65W (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DSBGA |
Package / Case | 6-UFBGA, DSBGA |
Image |
CSD13303W1015
TI/ST
29396
1.13
MASSTOCK ELECTRONICS LIMITED
CSD13303W1015
TexasIns
88635
1.5575
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
CSD13303W1015
TI/CC
3888
1.985
LINK ELECTRONICS LIMITED
CSD13303W1015
TI?
149000
2.4125
CIS Ltd (CHECK IC SOLUTION LIMITED)
CSD13303W1015
TI-BB
9000
2.84
SOUTHCHIP LIMITED