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Description
CSD16325Q5C www.ti.com. SLPS237B DECEMBER 2009 REVISED APRIL 2010. DualCool N-Channel NexFET Power MOSFETs. Check for Samples: Page 1. 1. D. 2. D. 3. D. 4. D. D. 5. G. 6. S. 7. S. 8. S. P0094-01. VGS Gate to Source Voltage V. 0. 1. 2. 3. 4. 5. 0. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. R. D. S(on). . Jun 29, 2016 CSD16325Q5C . Texas Instruments. MOSFET, N-CH, 25 V, 100 A, DualCool SON 5x6mm. DualCool SON. 5x6mm. R1, R6, R21, R24. 4. 10k. UCC27211A, and DualCool CSD16325Q5C NexFET Power MOSFET. The design operates at. 700kHz per phase achieving smallest form-factor and CSD16322Q5C = 91 Co. CSD16325Q5C = 88 C. Controller. Inductor = 76 C o o. = 69 Co. CSD16322. CSD16325. 100 Co. Controller. Inductor. 23 Co. 1.188.
| Part Number | CSD16325Q5C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 25V 100A 8SON |
| Series | NexFET |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 12.5V |
| Vgs (Max) | +10V, -8V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 30A, 8V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Package / Case | 8-PowerTDFN |
| Image |  |
CSD16325Q5C
TI/ST
5000
0.38
SUNTOP SEMICONDUCTOR CO., LIMITED
CSD16325Q5C
TexasIns
5000
1.295
ASSET GREEN TECH, INC
CSD16325Q5C
TI/CC
14963
2.21
ShenZhen PengZhanSheng Electronics Co.,Ltd
CSD16325Q5C
TI?
3000
3.125
Hongkong Dasenic Electronic Limited
CSD16325Q5C
TI-BB
500
4.04
HK HEQING ELECTRONICS LIMITED
