Part Number | CSD18532NQ5BT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 60V 100A |
Series | NexFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5340pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-VSON (5x6) |
Package / Case | 8-PowerTDFN |
Image |
CSD18532NQ5BT
TI/ST
10000
1.08
Ariel Electronic Technology Co., Limited
CSD18532NQ5BT
TexasIns
6000
1.665
Feture Technology Limited
CSD18532NQ5BT
TI/CC
20000
2.25
East Pioneer Electronic Co., Limited
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TI?
12000
2.835
MeiChuangXinKe (SZ) Electronics Co., Ltd.
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TI-BB
20000
3.42
HK ALL-WIN TECHNOLOGY LIMITED