Description
Apr 7, 2015 MSL Peak Temp. (3). Op Temp ( C). Device Marking. (4/5). Samples. CSD18536KCS . PREVIEW. TO-220. KCS. 3. 50. Pb-Free (RoHS. Exempt). 7.8. 17. 3.5. 3.2. Single. SON5x6. 55 to 150. CSD18535KCS. 60. 20. 1.6. 279. 1.6. 63. 10.4. 15.7. Single. TO-220. 55 to 175. CSD18536KCS . 60. 20. 1.3. 349.
Part Number | CSD18536KCS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 60V 200A TO-220-3 |
Series | NexFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 11430pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
CSD18536KCS
TI/ST
8000
0.6
Shenzhen FULSI Technology Co., Ltd
CSD18536KCS
TexasIns
6000
1.27
ZY (HK) TECHNOLOGY LIMITED
CSD18536KCS
TI/CC
10000
1.94
Shenzhen Taochip Electronic Co.,Ltd
CSD18536KCS
TI?
1891
2.61
UCAN TRADE (HK) LIMITED
CSD18536KCS
TI-BB
20000
3.28
HK ALL-WIN TECHNOLOGY LIMITED