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Description
Ordering Information(1). 2 Applications. Device. Package. Media. Qty. Ship. Secondary Side Synchronous Rectifier. TO-220 Plastic. CSD19501KCS . Tube. 50. Jul 21, 2014 CSD19501KCS . (1). The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI Apr 14, 2014 CSD19501KCS 80V, 110A. CSD19501KCS 80V, 110A. CSD19501KCS 80V, 110A. CSD19501KCS 80V, 110A. CSD19501KCS 80V, 110A. CSD19501KCS . Product Folder. Board Image. Design Features. Ideal charger for 8-cell LiFePO4 battery pack used in storage battery banks. Very low standby Aug 12, 2016 CSD19501KCS . Texas Instruments. MOSFET, N-CH, 80 V, 100 A, KCS0003A. KCS0003A. Q3. 1. 650V. IPP60R190P6. Infineon Technologies.
| Part Number | CSD19501KCS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 80V 100A TO220 |
| Series | NexFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 60A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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