(4/5) based on 11 customer reviews
Description
PRODUCTION DATA. CSD19502Q5B . SLPS413B DECEMBER 2013 REVISED MAY 2017. CSD19502Q5B 80 V N-Channel NexFET Power MOSFET. 1. Apr 2, 2015 8. UCC2808D-2. U1. 1 F. C4. GND. GND. 200KHz. 330pF. C3. 10.7k. R6. 1.00k. R3. /ENABLE. GND. 4. 7,8. 1,2,3. 5,6,. Q1. CSD19502Q5B . 3.3. Here MOSFET CSD19502Q5B (80V/100A, DNK0008A) and diode V10P-M3/86A (100V/10A, TO-227) are chosen. 4.3. LM3481 Flyback CCM Flyback Transfer LTV-817S. VOUT. BAT+. 330 F. C3. 10 F. C4. 25.5k. R5. 60.4k. R2. 4. 7,8. 1,2. ,3 . 5,6. ,. Q1. CSD19502Q5B . 100. R6. 2200pF. C12. 1. 3. 2. D1. V10P10-M3/86A. CSD19502Q5B . 80. 20. 2.7. 157. 3.4. 48. 8.6. 14. Single. SON5x6. 55 to 150. CSD19503KCS. 80. 20. 2.8. 94. 7.6. 28. 5.4. 9.8. Single. TO-220. 55 to 175.
| Part Number | CSD19502Q5B |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 80V 100A 8SON |
| Series | NexFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4870pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 19A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON (5x6) |
| Package / Case | 8-PowerTDFN |
| Image |  |
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