Part Number | CSD19506KCS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 80V TO-220-3 |
Series | NexFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 156nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12200pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
CSD19506KCS
TI/ST
159807
1.81
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
CSD19506KCS
TexasIns
10000
3.2875
Shenzhen Taochip Electronic Co.,Ltd
CSD19506KCS
TI/CC
600
4.765
Unit Electronics Co., Limited
CSD19506KCS
TI?
100
6.2425
Antony Electronic Ltd.
CSD19506KCS
TI-BB
43494
7.72
Yingxinyuan INT'L (Group) Limited