Part Number | CSD19537Q3T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 100V 50A 8VSON |
Series | NexFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 83W (Tc) |
Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-VSON (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Image |
CSD19537Q3T
TI/ST
2281
1.12
E-star Trading Enterprise Limited
CSD19537Q3T
TexasIns
701
2.1525
HK XINYI COMPONENTS ASIA CO., LIMITED
CSD19537Q3T
TI/CC
1044
3.185
HL Electronics (Hong Kong) Co.,Ltd
CSD19537Q3T
TI?
5162
4.2175
Hongkong Dasenic Electronic Limited
CSD19537Q3T
TI-BB
1498
5.25
HK FEILIDI ELECTRONIC CO., LIMITED