Part Number | CSD25213W10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 1.6A 4DSBGA |
Series | NexFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 478pF @ 10V |
Vgs (Max) | -6V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 47 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DSBGA (1x1) |
Package / Case | 4-UFBGA, DSBGA |
Image |
CSD25213W10
TI/ST
8684
0.8
IC Chip Co., Ltd.
CSD25213W10
TexasIns
522
2.07
KYO Inc.
CSD25213W10
TI/CC
3902
3.34
Ariel Electronic Technology Co., Limited
CSD25213W10
TI?
9430
4.61
HK XINYI COMPONENTS ASIA CO., LIMITED
CSD25213W10
TI-BB
9581
5.88
Shenzhen Taochip Electronic Co.,Ltd