(5/5) based on 20 customer reviews
Description
TC = 25 C. CSD25302Q2 www.ti.com. SLPS234B NOVEMBER 2009 REVISED JANUARY 2012. P-Channel NexFET Power MOSFET. 1FEATURES. 1 Features. High Efficiency Switch Mode Charger. Integrated Current Sensing. 2.5-A (bq24195L) or 4.5-A (bq24195) Fast. Bootstrap Diode. Charging. Nov 25, 2013 This document describes STs Spice model versions available for Power MOSFETs. This is a guide designed to support user choosing the best Number. Revision. Size. A4. Date: 9-Apr-2014. Sheet of. File: I:\2014 \ Thunder One\PCB & Schematic\Thunder One.Ddb. Drawn By: Thunder One. V1.2 . CSD25302Q2 . C5b. 1nF. C1b. 1nF. C2b. 1nF. C3. 47nF. C4. 4.7uF. L1. 2.2uH. Q3. Si231DS. SYS. Adaptor +. Power Pad. Adaptor -. Q2. Si231DS. R1 (1.5A max ).
| Part Number | CSD25302Q2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 20V 5A 6SON |
| Series | NexFET |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 3A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-SON |
| Package / Case | 6-SMD, Flat Leads |
| Image |  |
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