Part Number | CSD25303W1015 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 3A 6DSBGA |
Series | NexFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DSBGA (1x1.5) |
Package / Case | 6-UFBGA, DSBGA |
Image |
CSD25303W1015
TI/ST
8855
1.32
YU TUO (HONGKONG) TRADING CO., LIMITED
CSD25303W1015
TexasIns
4803
2.225
MY Group (Asia) Limited
CSD25303W1015
TI/CC
6374
3.13
MASSTOCK ELECTRONICS LIMITED
CSD25303W1015
TI?
5574
4.035
Corechips Co., Limited
CSD25303W1015
TI-BB
574
4.94
XINZAN TECHNOLOGY LIMITED