Description
MOSFET 2P-CH 3.9A 9DSBGA Series: NexFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25~C: 3.9A Rds On (Max) @ Id, Vgs: 162 mOhm @ 1A, 1.8V Vgs(th) (Max) @ Id: 1.1V @ 250米A Gate Charge (Qg) @ Vgs: 3.7nC @ 4.5V Input Capacitance (Ciss) @ Vds: 595pF @ 10V Power - Max: 700mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Supplier Device Package: 9-DSBGA
Part Number | CSD75207W15 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2P-CH 3.9A 9DSBGA |
Series | NexFET |
Packaging | 2 P-Channel (Dual) |
FET Type | Cut Tape (CT) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | - |
Current - Continuous Drain (Id) @ 25°C | 3.9A |
Rds On (Max) @ Id, Vgs | 162 mOhm @ 1A, 1.8V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V |
Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 9-UFBGA, DSBGA |
Supplier Device Package | 9-DSBGA |
Image |
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