Description
MOSFET 2N-CH 20V 39A 8VSON Series: NexFET? FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 39A Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 10A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250米A Gate Charge (Qg) @ Vgs: 15.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 2390pF @ 10V Power - Max: 2.5W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-SON (3.3x3.3)
Part Number | CSD85312Q3E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N-CH 20V 39A 8VSON |
Series | NexFET |
Packaging | 2 N-Channel (Dual) Common Source |
FET Type | Cut Tape (CT) |
FET Feature | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 39A |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | 8-VSON (3.3x3.3) |
Image |
CSD85312Q3E
TI/ST
10000
0.06
Shenzhen Taochip Electronic Co.,Ltd
CSD85312Q3E
TexasIns
7800
0.955
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
CSD85312Q3E
TI/CC
11050
1.85
N&S Electronic Co., Limited
CSD85312Q3E
TI?
21632
2.745
UCAN TRADE (HK) LIMITED
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TI-BB
28448
3.64
MASSTOCK ELECTRONICS LIMITED