Description
MOSFET 2N-CH 60V 15A 8SOIC Series: NexFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 15A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250米A Gate Charge (Qg) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) @ Vds: 741pF @ 30V Power - Max: 2.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | CSD88539NDT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N-CH 60V 15A 8SOIC |
Series | NexFET |
Packaging | 2 N-Channel (Dual) |
FET Type | Tape & Reel (TR) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 15A |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 741pF @ 30V |
Power - Max | 2.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
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