Description
MOSFET N/P-CH 30V TSOT23-6 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 3.4A, 2.8A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250米A Gate Charge (Qg) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) @ Vds: 400pF @ 15V Power - Max: 840mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6
Part Number | DMG6602SVT-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET N/P-CH 30V TSOT23-6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
Power - Max | 840mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | TSOT-23-6 |
Image |
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