(4/5) based on 11 customer reviews
Description
MOSFET 2N-CH 60V 0.63A TSOT26 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 630mA Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26
| Part Number | DMN61D8LVTQ-7 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET 2N-CH 60V 0.63A TSOT26 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 150mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V |
| Power - Max | 820mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSOT-26 |
| Image |  |
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