Part Number | DMP6110SVT7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 60V TSOT26 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 969pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta) |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSOT-26 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
DMP6110SVT-7
TI/ST
180
1.34
SUNTOP SEMICONDUCTOR CO., LIMITED
DMP6110SVT-7
TexasIns
39
1.8
SEHOT CO., LIMITED
DMP6110SVT-7
TI/CC
10000
2.26
Yingxinyuan INT'L (Group) Limited
DMP6110SVT-7
TI?
4868000
2.72
Shenzhen WTX Capacitor Co., Ltd.
DMP6110SVT-7
TI-BB
148530
3.18
Kunlida Electronics (HK) Limited