Part Number | FCD2250N80Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 800V 2.6A TO252-3 |
Series | SuperFET II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 2.25 Ohm @ 1.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FCD2250N80Z
TI/ST
4853
0.87
Hongkong Shengshi Electronics Limited
FCD2250N80Z
TexasIns
2269
1.3225
WIN AND WIN ELECTRONICS LIMITED
FCD2250N80Z
TI/CC
8097
1.775
Yingxinyuan INT'L (Group) Limited
FCD2250N80Z
TI?
8137
2.2275
Riking Technology (HK) Co., Limited
FCD2250N80Z
TI-BB
9281
2.68
Kunlida Electronics (HK) Limited