Part Number | FCD4N60TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 3.9A DPAK |
Series | SuperFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FCD4N60TM
TI/ST
2500
0.53
Pivot Technology Co., Ltd.
FCD4N60TM
TexasIns
5612
1.0725
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FCD4N60TM
TI/CC
9000
1.615
SUMMER TECH(HK) LIMITED
FCD4N60TM
TI?
274
2.1575
WIN AND WIN ELECTRONICS LIMITED
FCD4N60TM
TI-BB
69
2.7
Yingxinyuan INT'L (Group) Limited