![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Part Number | FCP190N60E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V TO220-3 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3175pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image | ![]() |
FCP190N60E
TI/ST
400
0.81
RX ELECTRONICS LIMITED
FCP190N60E
TexasIns
89019
1.7475
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FCP190N60E
TI/CC
30000
2.685
Superior Electronics Limited
FCP190N60E
TI?
1
3.6225
Jiayu Electronic (HK) Limited
FCP190N60E
TI-BB
500000
4.56
VBsemi Electronics Co., Limited