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Description
Datasheet Sep 23, 2003 www.irf.com. Class D Audio Amplifier Design. Class D Amplifier Introduction. Gate Driver. MOSFET. Package. Design Example. Theory of Apr 27, 2010 FCP20N60 . R18. 38.3k . 1/8W. Q4. FCP20N60 . R19. 10k . 1/8W. Transformer. R20. 1k . 1/8W. TX1. 66:6. Primary 20mH. Capacitor. TX2. 1:1. UNISONIC TECHNOLOGIES CO., LTD. 20N60. Power MOSFET www.unisonic. com.tw. 1 of 3. Copyright 2015 Unisonic Technologies Co., Ltd. QW-R502-587. Fairchild FCP20N60 power MOSFET datasheet in. Fig. 4. The curve was produced using a test circuit that drives the gate of the DUT (Device Under Test). Sep 25, 2013 output capacitance than SuperFET I MOSFET FCP20N60 . (for a typical switching power supply bulk capacitor voltage), as shown in Figure 13
| Part Number | FCP20N60 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 600V 20A TO-220 |
| Series | SuperFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FCP20N60
TI/ST
10000
1.57
Hong Kong Capital Industrial Co.,Ltd
FCP20N60
TexasIns
9000
2.8175
SUMMER TECH(HK) LIMITED
FCP20N60
TI/CC
405
4.065
Yingxinyuan INT'L (Group) Limited
FCP20N60
TI?
24000
5.3125
Cicotex Electronics (HK) Limited
FCP20N60
TI-BB
11010
6.56
Ande Electronics Co., Limited
