Texas Instruments

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Texas Instruments has been making progress possible for decades. We are a global semiconductor company that designs, manufactures, tests and sells analog and embedded processing chips. Our products help our customers efficiently manage power, accurately sense and transmit data and provide the core control or processing in their designs.

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  : HKIN - Datasheet (Result Page) 21 (0.51 ) (5)       FCPF11N60F pdf FCPF11N60F pdf Nov 1, 2013 FCPF11N60F N-Channel SuperFET. . FRFET. . MOSFET. 2008 Fairchild Semiconductor Corporation. FCPF11N60F Rev. C1. Google - 7/2016 PDF RoHS/REACH/JIG - Fairchild PDF RoHS/REACH/JIG - Fairchild Jan 8, 2016 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCPF11N60F . TO220F-3. FSSZ. FSSZ. 2.11234. Google - 7/2016 PDF RoHS IPC1752 - Fairchild Semiconductor PDF RoHS IPC1752 - Fairchild Semiconductor Jul 14, 2015 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FCPF11N60F . FCPF11N60F . Google - 7/2016 AN-6208 AN-6208 Mar 10, 2011 FCPF11N60F . R212. 24k . 1/8W. Q2. FCPF11N60F . Capacitor. Q3. FDP025N06 . C101. 270 F. 450V. Q4. FDP025N06. C102. 0.33 F. 50V. IC. Google - 7/2016 pdfrd-574 pdfrd-574 3. MOSFET FQU13N10LTU TO-. 251. Fairchild. Semiconductor. 75 Q4, Q5. FCPF11N60F . 2. MOSFET Fairchild. FCPF11N60F TO-220. Fairchild. Semiconductor. Google - 7/2016 1 2 3 4 5 :     HKIPortal_resize(); HKIPortal_attachEvent(window, load, HKIPortal_resize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: .   Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}>

Part Number FCPF11N60F
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand Texas Instruments
Description MOSFET N-CH 600V 11A TO-220F
Series SuperFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Rds On (Max) @ Id, Vgs 380 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.28   Highest Price: $3.68
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