Part Number | FDB12N50TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 500V 11.5A D2PAK |
Series | UniFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1315pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
FDB12N50TM
TI?
5220
4.305
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FDB12N50TM
TI-BB
6000
5.4
NICE UPWAY INTERNATIONAL LIMITED
FDB12N50TM
TI/ST
18500
1.02
HK HEQING ELECTRONICS LIMITED
FDB12N50TM
TexasIns
12000
2.115
LANTEK INT'L TRADE LIMITED
FDB12N50TM
TI/CC
3000
3.21
Shenzhen Qiangneng Electronics Co., Ltd.