Description
FDB8880 : 30V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET has been designed specifically Manufacturing Site. Weight*. UOM. Unit Type. FDB8880 . FDB8880 . TO263-2. ( NiLFAlBW). Jan 08, 2016. 1.0. FSCP. 1.485898 g. Each. Manufacturing Process Nov 16, 2007 FDB8880 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDC2512_NL. FDC2512. Fairchild Semiconductor. May 16, 2008.
Part Number | FDB8880 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 54A TO-263AB |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 55W (Tc) |
Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 40A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
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