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Description
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area. 43. oC/ W. Device Marking. Device. Package. Reel Size. Tape Width. Quantity. FDB8896 . N-Channel PowerTrench. MOSFET. . July 2010. Qualified to AEC Q101. RoHS Compliant. S. FDB8896 . FDB8896_F085. TO-263AB. 330mm. 24mm. Mar 24, 2015 Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDB8896 . Aug 8, 2014 FDB8896 . TO-263-3. (NiLFAlBW). SUZHOU. INTERNAL. SUZHOU. 1.4858980. 1 . Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. 2008 Fairchild Semiconductor Corporation. N. FDP8896 Rev. A2. FDP889. 6. FDP8896. N-Channel PowerTrench. . MOSFET. 30V, 92A, 5.9m . General
| Part Number | FDB8896 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V 93A TO-263AB |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 93A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263AB) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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