Part Number | FDC6306P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2P-CH 20V 1.9A SSOT6 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.9A |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.9A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 441pF @ 10V |
Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SuperSOT,6 |
Image |
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