(5/5) based on 4 customer reviews
Description
DATASHEET Jul 8, 2016 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDC642P . FDC642P . SSOT-6. (AdhesiveCuBW-G). FDC642P . SSOT-6 (AdhesiveCuBW-G). FSCP. FSCP. 0.017368. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . FDC642P . Q302. RT1N141M-TP-1. Q303. 33k. R374. 68k. R375. 0.01. C373. ATA_PCONT. 1k. R376. 1. C377. 0.01. C379. FE_SW12V. FE_SW5V. 2.2uH. L304. PMN50XP. FDC640P. PMN50XP. FDC642P . PMN50XP. FDC653N. PMN49EN. FDC655BN. PMN40LN. FDC697P. PMN50XP. FDC699P. PMN50XP. FDC796N. Nov 16, 2007 FDC642P . Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDC645N_NF073. FDC645N. Fairchild Semiconductor. May 16, 2008.
| Part Number | FDC642P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 20V 4A 6SSOT |
| Series | Automotive, AEC-Q101, PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT,6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image |  |
Hot Offer
FDC642P
TI/CC
35800
2.98
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDC642P
TI?
3000
4.175
Hong Kong Capital Industrial Co.,Ltd
FDC642P
TI-BB
500000
5.37
VBsemi Electronics Co., Limited
FDC642P
TI/ST
63901
0.59
HK HEQING ELECTRONICS LIMITED
FDC642P
TexasIns
16281
1.785
ATLANTIC TECHNOLOGY LIMITED
