Part Number | FDC645N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 5.5A SSOT-6 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1460pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 6.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT,6 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
FDC645N
TI/ST
16000
1.52
Finestock Electronics HK Limited
FDC645N
TexasIns
3000
2.6175
HK HEQING ELECTRONICS LIMITED
FDC645N_NL
TI/CC
20000
3.715
Ande Electronics Co., Limited
FDC645N
TI?
9000
4.8125
SUMMER TECH(HK) LIMITED
FDC645N
TI-BB
33671
5.91
CIS Ltd (CHECK IC SOLUTION LIMITED)