Part Number | FDD6N25TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 250V 4.4A DPAK |
Series | UniFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 2.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD6N25TM
TI/ST
16000
1.11
Finestock Electronics HK Limited
FDD6N25TM
TexasIns
2815
2.7175
HK HEQING ELECTRONICS LIMITED
FDD6N25TM 2.6A 250V
TI/CC
11790
4.325
N&S Electronic Co., Limited
FDD6N25TM
TI?
9000
5.9325
SUMMER TECH(HK) LIMITED
FDD6N25TM
TI-BB
44450
7.54
CIS Ltd (CHECK IC SOLUTION LIMITED)